View FDMS7660_4584089.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDMS7660 N-Channel PowerTrench(R) MOSFET
April 2009
FDMS7660
N-Channel PowerTrench(R) MOSFET
30 V, 2.8 m Features
Max rDS(on) = 2.8 m at VGS = 10 V, ID = 25 A Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 19 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications MSL1 robust package design 100% UIL tested RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook VRM Vcore Switching for Desktop and Server OringFET / Load Switch DC-DC Conversion
Top
Bottom S Pin 1 S S G D D D D D D D D 5 6 7 8 4 3 2 1 G S S S
Power 56
MOSFET Maximum Ratings TA = 25 C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) (Note 4) Ratings 30 20 42 144 25 150 128 78 2.5 -55 to +150 mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 C/W
Package Marking and Ordering Information
Device Marking FDMS7660 Device FDMS7660 Package Power 56
1
Reel Size 13 ''
Tape Width 12 mm
Quantity 3000 units
www.fairchildsemi.com
(c)2009 Fairchild Semiconductor Corporation FDMS7660 Rev. D
FDMS7660 N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 17 1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 10 V , ID = 25 A VGS = 4.5 V, ID = 19 A VGS = 10 V, ID = 25 A, TJ = 125 C VDS = 5 V, ID = 25 A 1.25 1.9 -7 1.9 2.7 2.5 250 2.8 3.5 3.7 S m 3.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 4185 1380 125 0.9 5565 1830 190 2.0 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V, ID = 25 A VDD = 15 V, ID = 25A, VGS = 10 V, RGEN = 6 17 9 37 7 60 27 12.3 7.2 31 18 60 13 84 38 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr ta tb S trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Softness (tb/ta) Reverse Recovery Time Reverse Recovery Charge IF = 25 A, di/dt = 300 A/s IF = 25 A, di/dt = 100 A/s VGS = 0 V, IS = 2.1 A VGS = 0 V, IS = 25 A (Note 2) (Note 2) 0.7 0.8 46 26 19 27 1.4 36 43 58 68 ns nC 0.95 1.1 74 42 V ns nC nC nC
Notes: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design.
a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper.
b. 125 C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 128 mJ is based on starting TJ = 25 C, L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 23 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
(c)2009 Fairchild Semiconductor Corporation FDMS7660 Rev. D
2
www.fairchildsemi.com
FDMS7660 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
150
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V
14
VGS = 4.5 V VGS = 4 V VGS = 3.5 V
12
VGS = 3 V
120
ID, DRAIN CURRENT (A)
10 8
VGS = 3.5 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
90 60
6 4 2 0 0 30 60 90 120 150
ID, DRAIN CURRENT (A)
VGS = 10 V VGS = 4.5 V VGS = 4 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
30
VGS = 3 V
0 0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
10
SOURCE ON-RESISTANCE (m)
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.4 1.2 1.0 0.8 0.6 -75
ID = 25 A VGS = 10 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
8
ID = 25 A
rDS(on), DRAIN TO
6 4
TJ = 125 oC
2
TJ = 25 oC
0
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
150 120
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
200 100
VGS = 0 V
VDS = 5 V
TJ = 150 oC
90
TJ = 150
oC
10
TJ = 25 oC
60
TJ = 25 oC
1
TJ = -55 oC
30
TJ = -55 oC
0 1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V)
0.1 0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2009 Fairchild Semiconductor Corporation FDMS7660 Rev. D
3
www.fairchildsemi.com
FDMS7660 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 25 A
10000
Ciss
CAPACITANCE (pF)
VDD = 15 V
8
1000
Coss
6
VDD = 10 V VDD = 20 V
4 2
100
f = 1 MHz VGS = 0 V
Crss
0 0 15 30
Qg, GATE CHARGE (nC)
45
60
10 0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
150
ID, DRAIN CURRENT (A)
100
IAS, AVALANCHE CURRENT (A)
120
VGS = 10 V
TJ
= 25 oC TJ = 100 oC
90
VGS = 4.5 V
10
60 30
Limited by Package RJC = 1.6 C/W
o
TJ = 125 oC
1 0.01
0.1
1
10
100
1000
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
Tc, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
500 100
ID, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
2000 1000
VGS = 10 V
SINGLE PULSE RJA = 125 oC/W TA = 25 oC
100 us
P(PK), PEAK TRANSIENT POWER (W)
10
1 ms
THIS AREA IS LIMITED BY rDS(on)
100
1
10 ms 100 ms 1s 10 s DC
10
0.1
SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 C
o
0.01 0.01
0.1
1
10
100
1 0.5 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
(c)2009 Fairchild Semiconductor Corporation FDMS7660 Rev. D
4
www.fairchildsemi.com
FDMS7660 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
0.01
PDM
t1
0.001
SINGLE PULSE RJA = 125 C/W
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.0001 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve Figure 15.
30 25 20
CURRENT (A)
di/dt = 300 A/s
15 10 5 0 -5 0 40 80 120 160 200 240
TIME (ns)
Figure 14. Body Diode Reverse Recovery Characteristics
(c)2009 Fairchild Semiconductor Corporation FDMS7660 Rev. D
5
www.fairchildsemi.com
FDMS7660 N-Channel PowerTrench(R) MOSFET
Dimensional Outline and Pad Layout
(c)2009 Fairchild Semiconductor Corporation FDMS7660 Rev. D
6
www.fairchildsemi.com
FDMS7660 N-Channel PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM PowerTrench(R) F-PFSTM The Power Franchise(R) PowerXSTM Build it NowTM FRFET(R) (R) Global Power ResourceSM Programmable Active DroopTM CorePLUSTM Green FPSTM QFET(R) CorePOWERTM TinyBoostTM QSTM Green FPSTM e-SeriesTM CROSSVOLTTM TinyBuckTM Quiet SeriesTM GmaxTM CTLTM TinyLogic(R) RapidConfigureTM GTOTM Current Transfer LogicTM TINYOPTOTM IntelliMAXTM EcoSPARK(R) TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM EZSWITCHTM * Saving our world, 1mW /W /kW at a timeTM MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM TRUECURRENTTM* SPM(R) MicroPakTM (R) SerDesTM STEALTHTM MillerDriveTM (R) Fairchild SuperFETTM MotionMaxTM (R) Fairchild Semiconductor SuperSOTTM-3 Motion-SPMTM FACT Quiet SeriesTM UHC(R) SuperSOTTM-6 OPTOLOGIC(R) (R) FACT OPTOPLANAR(R) Ultra FRFETTM SuperSOTTM-8 (R) (R) FAST UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
(c)2009 Fairchild Semiconductor Corporation FDMS7660 Rev. D
7
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FDMS7660

	To Download FDMS7660 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .